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Device optimization of the FinFET having an isolated n+/p+ strapped gate

Kim, H. g.; Kim, J. s.; Won, T.

Microelectronic engineering. VOL 84; NUMBER 5-8, ; 2007, 1656-1659 -- Elsevier Science B.V., Amsterdam. (pages 1656-1659) -- 2007

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2D Quantum-Mechanical Modeling of a FinFET having an Isolated n+/p+ Gate Region Strapped with Metal and Polysilicon

Kim, H.-G. et al.

The journal of the Korean Physical Society.; International symposium on the physics of semiconductors and applications; Jeju, Korea, 2006; Aug, 2007, 744-748 -- Korean Physical Society,; 2007 (pages 744-748) -- 2007

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2D Quantum-Mechanical Modeling of a FinFET having an Isolated n+/p+ Gate Region Strapped with Metal and Polysilicon

Kim, H.-G.; Kim, J.-S.; Won, T.

The journal of the Korean Physical Society. VOL 50; NUMB 3, ; 2007, 744-748 -- Korean Physical Society; 1999 (pages 744-748) -- 2007

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Analysis of functional domains present in the N-terminus of the SipB protein

Kim, B. H. et al.

Microbiology. VOL 153; PART 9, ; 2007, 2998-3008 -- SOCIETY FOR GENERAL MICROBIOLOGY (pages 2998-3008) -- 2007

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Effect of working pressure on the properties of BaTiO3-CoFe2O4 composite films deposited on STO (100) by PLD

Kim, K. S. et al.

Materials letters. VOL 64; NUMBER 15, ; 2010, 1738-1741 -- Elsevier Science B.V., Amsterdam. (pages 1738-1741) -- 2010

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Piezoelectric and Dielectric Properties of Fe~2O~3-Doped 0.57Pb(Sc~1~/~2Nb~1~/~2)O~3-0.43PbTiO~3 Ceramic materials

Kim, J.-S. et al.

Japanese journal of applied physics. Part 1, Regular papers, short notes and review papers. VOL 38; NUMBER 3A; ISSUE 495, ; 1999, 1433-1437 -- JAPANESE JOURNAL OF APPLIED PHYSICS Part: 495; (pages 1433-1437) -- 1999

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Atomistic modelling for boron diffusion in strained silicon substrate

Kim, Y. K. et al.

Molecular simulation. VOL 34; NUMBER 1, ; 2008, 41-45 -- Taylor & Francis (pages 41-45) -- 2008

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Quantum Mechanical Device Modeling: FinFET Having an Isolated n+/p+ Gate Region Strapped with Poly-Silicon

Kim, H.-g. et al.

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY.; International conference on nanoscience and nanotechnology; Gwangju, Korea, 2006; Dec, 2007, 4135-4138 -- American Scientific Publishers; 2007 (pages 4135-4138) -- 2007

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Ab-Initio Calculation for Boron Diffusion in Si/SiGe Strained Layers

Kim, Y.-K. et al.

The journal of the Korean Physical Society. VOL 51; SUPP/3, ; 2007, S270-S274 -- Korean Physical Society; 1999 (pages S270-S274) -- 2007

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Atomistic Modeling for Boron Diffusion in Strained Silicon Substrate

Kim, Y.-K. et al.

NANOTECH; NSTI Nanotech the Nanotechnology conference and trade show; 2007 May, , 2007, 87 -- Boca Raton, FI; CRC Press; 2007 -- 2007

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