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Temperature Dependent Characterization of Imbedded InAs Quantum Dots in GaAs Superlattice Solar Cell Structures by High Resolution X-ray Diffraction

Sheng, J.J. et al.

Materials Research Society symposia proceedings.; Reliability and materials issues of III-V and II-VI semiconductor optical and electrical devices and materials II; San Francisco, CA, 2012; Apr, 2012, 173-180 -- Warrendale, Pa.; Materials Research Society; c2012 Part; (pages 173-180) -- 2012

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Temperature Dependent Characterization of Imbedded InAs Quantum Dots in GaAs Superlattice Solar Cell Structures by High Resolution X-ray Diffraction

Sheng, J.J. et al.

Materials Research Society symposia proceedings. VOL 1432, ; 2012, 173-180 -- Warrendale, Pa.; Materials Research Society; 1999 Part; (pages 173-180) -- 2012

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by this Author/Contributor:

  1. Polly, S.J.
  2. Hubbard, S.M.
  3. Chapman, D.C.
  4. Han, S.M.
  5. Wilt, D.M.

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