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Performance of Poly-Si Thin Film Transistors Fabricated by Excimer-Laser Annealing of SiH~4- and Si~2H~6- Source Low Pressure Chemical Vapor Deposited a-Si Films with or without Solid-Phase Crystallization

Fuse, M. et al.

Diffusion and defect data. Pt. B, Solid state phenomena.; Polycrystalline semiconductors III: physics and technology; San Malo; France, 1993; Sep, 1994, 565-570 -- Scitec Publications; 1994 Part: Part 37/38; (pages 565-570) -- 1994

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by this Author/Contributor:

  1. Hirota, M.
  2. Strunk, H. P.
  3. Asai, I.
  4. Fuse, M.
  5. Miyamoto, Y

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