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Silicon carbide for UV, alpha, beta and X-ray detectors: Results and perspectives

Moscatelli, F.

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment. VOL 583; NUMBER 1, ; 2007, 157-161 -- Elsevier Science B.V., Amsterdam. (pages 157-161) -- 2007

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Silicon carbide for UV, alpha, beta and X-ray detectors: Results and perspectives

Moscatelli, F.; Borchi, E.

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment.; International conference on radiation effects on semiconductor materials, detectors and devices; RESMDD 2006; Florence, Italy, 2006; Oct, 2007, 157-161 -- Elsevier; 2007 (pages 157-161) -- 2007

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P^+ Implanted 6H-SiC N^+-i-p Diodes: Evidence for a Post-implantation-annealing Dependent Defect Activation

Nipoti, R.|Puzzanghera, M.|Moscatelli, F.

materials research society symposia proceedings -- North Holland -- Volume: 1693 (pages 131-136) -- 2014

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Formula Not Shown Implanted 4H-SiC Formula Not Shown -i-n Diodes: Forward Current Negative Temperature Coefficient

Nipoti, R.; Moscatelli, F.; De Nicola, P.

IEEE Electron device letters. VOL 34; NUMBER 8, ; 2013, 966-968 -- IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS Part 8; (pages 966-968) -- 2013

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Analysis and simulation of charge collection efficiency in silicon thin detectors

Petasecca, M.; Moscatelli, F.; Pignatel, G. U.

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment. VOL 546; NUMBER 1-2, ; 2005, 291-295 -- Elsevier Science B.V., Amsterdam. (pages 291-295) -- 2005

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P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation

Nipoti, R.; Puzzanghera, M.; Moscatelli, F.

MRS proceedings. Issue 1693: (2014, January 93rd) -- Materials Research Society in partnership with Cambridge University Press

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C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al^+ Implanted JTE p^+n 4H-SiC Diodes

Fabbri, F. et al.

Materials science forum. VOL 615/617, ; 2009, 469-472 -- Transtec Publications; 1999 Part; (pages 469-472) -- 2009

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A new surgical technique for anterior abdominal hernias with mesh

Guarnieri, A. et al.

Minerva chirurgica. VOL 49; NUMBER 10, ; 1994, 967 -- EDIZIONE MINERVA MEDICA Part: Part 10; -- 1994

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Numerical Simulation of Radiation Damage Effects in p-Type and n-Type FZ Silicon Detectors

Petasecca, M. et al.

IEEE transactions on nuclear science. VOL 53; NUMB 5; PART 2, ; 2006, 2971-2976 -- IEEE; 1999 Part: 2; (pages 2971-2976) -- 2006

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MOS capacitors obtained by wet oxidation of n-type 4H-SiC pre-implanted with nitrogen

Poggi, A. et al.

Microelectronic engineering. VOL 84; NUMBER 12, ; 2007, 2804-2809 -- Elsevier Science B.V., Amsterdam. (pages 2804-2809) -- 2007

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by this Author/Contributor:

  1. Moscatelli, F.
  2. Nipoti, R.
  3. Poggi, A.
  4. Moscatelli, M.
  5. Passeri, D.

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