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Characteristics of GaAs complementary heterojunction FETs (C-HFETs) and C-HFET based amplifiers exposed to high neutron fluences

Karpinski, W. et al.

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment. VOL 361; NUMBER 3, ; 1995, 558 -- ELSEVIER Part: Part 3; -- 1995

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DC and noise performance of C-HFET transistors at low drain current densities

Karpinski, W. et al.

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment. VOL 369; NUMBER 1, ; 1996, 255-262 -- ELSEVIER Part: Part 1; (pages 255-262) -- 1996

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DC and noise performance of C-HFET transistors at low drain current densities

Karpinski, W. et al.

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment.; Semiconductor detectors: New developments in radiation detectors; Schloss Elmau; Germany, 1995; May, 1996, 465-469 -- Elsevier Science; 1996 Part: Part 2/3; (pages 465-469) -- 1996

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Effects of irradiation on the noise and DC performance of transistors and preamplifiers based on GaAs technology

Karpinski, W. et al.

NUCLEAR PHYSICS B PROCEEDINGS SUPPLEMENTS.; Advanced technology and particle physics; Como; Italy, 1994; Oct, 1995, 536-541 -- Elsevier; 1995 Part: Part 44; (pages 536-541) -- 1995

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DC and noise performance of C-HFET transistors at low drain current densities

Karpinski, W. et al.

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment. VOL 377; NUMBER 2/3, ; 1996, 465-469 -- ELSEVIER Part: Part 2/3; (pages 465-469) -- 1996

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DC and Noise Performance of C-HFET Transistors at Low Drain Current Densities

Karpinski, W. et al.

GALLIUM ARSENIDE AND RELATED COMPOUNDS -LONDON- WORLD SCIENTIFIC-.; Gallium arsenide and related compounds: band related compounds; San Miniato; Italy, 1995; Mar, 1995, 188-198 -- World Scientific; 1996 Part: Part; (pages 188-198) -- 1995

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Characteristics of GaAs complementary heterojunction FETs and C-HFET-based amplifiers exposed to high proton fluences

Luebelsmeyer, K. et al.

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment. VOL 394; NUMBER 1/2, ; 1997, 1-6 -- ELSEVIER Part: Part 1/2; (pages 1-6) -- 1997

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Effects of irradiation on the noise and DC performance of transistors and preamplifiers based on GaAs technology

Karpinski, W. et al.

NORTH - HOLLAND Part: Part 44; (pages 536-541) -- 1995

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Radiation hardness of GaAs complementary heterojunction field effect transistors (CHFETs) and CHFET-based monolithic amplifiers

Tenbusch, F. et al.

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment. VOL 388; NUMBER 3, ; 1997, 412-416 -- ELSEVIER Part: Part 3; (pages 412-416) -- 1997

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Test results of GaAs strip detectors in high energy particle beams

Braunschweig, W. et al.

NORTH - HOLLAND Part: Part 44; (pages 386-390) -- 1995

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